Installation type | Surface mount |
packing | TR |
series | SIPMOS® |
Part status | stop production |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | PG-SOT223-4 |
Country of origin | Germany |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 100 V |
Current at 25 ° C - continuous drain (Id) | 1.7A(Ta) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
On resistance (maximum) for different Ids and Vgs | 300 mΩ @ 1.7A,10V |
Vgs (th) (maximum) for different Ids | 4V @ 1mA |
Gate charge (Qg) at different Vgs (maximum) | - |
Vgs (max) | ±20V |
Input capacitance at different Vds (Ciss) (maximum) | 550 pF @ 25 V |
FET function | - |
Power dissipation (maximum) | 1.8W(Ta) |