BSS225L6327HTSA1
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BSS225L6327HTSA1
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BSS225L6327HTSA1

Brand:Infineon
Model:BSS225L6327HTSA1
stock:39275
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
series SIPMOS®
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing PG-SOT89
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 600 V
Current at 25 ° C - continuous drain (Id) 90mA(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 45 Ω @ 90mA,10V
Vgs (th) (maximum) for different Ids 2.3V @ 94µA
Gate charge (Qg) at different Vgs (maximum) 5.8 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 131 pF @ 25 V
FET function -
Power dissipation (maximum) 1W(Ta)
Common problem
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