Installation type | Surface mount |
packing | TR,CT |
series | SIPMOS® |
Part status | stop production |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | PG-SOT223-4-21 |
Country of origin | Germany |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 200 V |
Current at 25 ° C - continuous drain (Id) | 660mA(Ta) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 0V,10V |
On resistance (maximum) for different Ids and Vgs | 1.8 Ω @ 660mA,10V |
Vgs (th) (maximum) for different Ids | 1V @ 400µA |
Gate charge (Qg) at different Vgs (maximum) | 14 nC @ 5 V |
Vgs (max) | ±20V |
Input capacitance at different Vds (Ciss) (maximum) | 430 pF @ 25 V |
FET function | depletion mode |
Power dissipation (maximum) | 1.8W(Ta) |