IRLBD59N04ETRLP
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likeIRLBD59N04ETRLP
Brand：Infineon
Model：IRLBD59N04ETRLP
stock：6423
Store：ShenZhen/Hongkong
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| Installation type | Surface mount |
| packing | TR |
| series | HEXFET® |
| Part status | stop production |
| working temperature | -55°C ~ 175°C(TJ) |
| Encapsulation/Housing | TO-263-5 |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 40 V |
| Current at 25 ° C - continuous drain (Id) | 59A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 5V,10V |
| On resistance (maximum) for different Ids and Vgs | 18 mΩ @ 35A,10V |
| Vgs (th) (maximum) for different Ids | 2V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 50 nC @ 5 V |
| Vgs (max) | ±10V |
| Input capacitance at different Vds (Ciss) (maximum) | 2190 pF @ 25 V |
| FET function | - |
| Power dissipation (maximum) | 130W(Tc) |
Common problem
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