NVMFS5C410NWFT1G-M
Home
Category
MOSFET
NVMFS5C410NWFT1G-M
The pictures are for reference only
like

NVMFS5C410NWFT1G-M

Brand:ON
Model:NVMFS5C410NWFT1G-M
stock:19061
Store:ShenZhen/Hongkong
DataSheet: Search
Price: The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing TR
series Automotive, AEC-Q101
Part status stop production
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing 5-DFN(5x6)(8-SOFL)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 40 V
Current at 25 ° C - continuous drain (Id) 46A(Ta),300A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 0.92 mΩ @ 50A,10V
Vgs (th) (maximum) for different Ids 3.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 86 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 6100 pF @ 25 V
FET function -
Power dissipation (maximum) 3.9W(Ta),166W(Tc)
Common problem
Offer
Offer Table
Model
Num
Company
Email
We will reply to you through your email address as soon as we receive your offer