IRF6607TR1
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IRF6607TR1
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IRF6607TR1

Brand:Infineon
Model:IRF6607TR1
stock:7001
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
series HEXFET®
Part status stop production
working temperature -40°C ~ 150°C(TJ)
Encapsulation/Housing DIRECTFET™ MT
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 27A(Ta),94A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,7V
On resistance (maximum) for different Ids and Vgs 3.3 mΩ @ 25A,10V
Vgs (th) (maximum) for different Ids 2V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 75 nC @ 4.5 V
Vgs (max) ±12V
Input capacitance at different Vds (Ciss) (maximum) 6930 pF @ 15 V
FET function -
Power dissipation (maximum) 3.6W(Ta),42W(Tc)
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