IPP80N04S2H4AKSA1
Home
Category
MOSFET
IPP80N04S2H4AKSA1
The pictures are for reference only
like

IPP80N04S2H4AKSA1

Brand:Infineon
Model:IPP80N04S2H4AKSA1
stock:24351
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Through-Hole
packing pipe
series OptiMOS™
Part status stop production
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing PG-TO220-3-1
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 40 V
Current at 25 ° C - continuous drain (Id) 80A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 4 mΩ @ 80A,10V
Vgs (th) (maximum) for different Ids 4V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 148 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 4400 pF @ 25 V
FET function -
Power dissipation (maximum) 300W(Tc)
Common problem
Offer
Offer Table
Model
Num
Company
Email
We will reply to you through your email address as soon as we receive your offer