Installation type | Surface mount |
packing | CT |
series | - |
Part status | stop production |
working temperature | - |
Encapsulation/Housing | PQFN(5x6)Single chip pad |
Country of origin | Germany |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 30 V |
Current at 25 ° C - continuous drain (Id) | 35A(Ta),100A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | - |
On resistance (maximum) for different Ids and Vgs | 1.85 mΩ @ 50A,10V |
Vgs (th) (maximum) for different Ids | 2.35V @ 100µA |
Gate charge (Qg) at different Vgs (maximum) | 77 nC @ 10 V |
Vgs (max) | - |
Input capacitance at different Vds (Ciss) (maximum) | 5114 pF @ 15 V |
FET function | - |
Power dissipation (maximum) | - |