Installation type | Surface mount |
packing | TR |
series | HEXFET® |
Part status | stop production |
working temperature | -40°C ~ 150°C(TJ) |
Encapsulation/Housing | DIRECTFET™ MZ |
Country of origin | Germany |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 80 V |
Current at 25 ° C - continuous drain (Id) | 55A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
On resistance (maximum) for different Ids and Vgs | 15 mΩ @ 12A,10V |
Vgs (th) (maximum) for different Ids | 4.9V @ 100µA |
Gate charge (Qg) at different Vgs (maximum) | 31 nC @ 10 V |
Vgs (max) | ±20V |
Input capacitance at different Vds (Ciss) (maximum) | 1320 pF @ 25 V |
FET function | - |
Power dissipation (maximum) | 2.8W(Ta),89W(Tc) |