IRFHM830DTR2PBF
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IRFHM830DTR2PBF
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IRFHM830DTR2PBF

Brand:Infineon
Model:IRFHM830DTR2PBF
stock:32588
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
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Installation type Surface mount
packing CT
series -
Part status stop production
working temperature -
Encapsulation/Housing PQFN(3x3)
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 20A(Ta),40A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) -
On resistance (maximum) for different Ids and Vgs 4.3 mΩ @ 20A,10V
Vgs (th) (maximum) for different Ids 2.35V @ 50µA
Gate charge (Qg) at different Vgs (maximum) 27 nC @ 10 V
Vgs (max) -
Input capacitance at different Vds (Ciss) (maximum) 1797 pF @ 25 V
FET function -
Power dissipation (maximum) -
Common problem
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