IPD65R650CEATMA1
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IPD65R650CEATMA1
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IPD65R650CEATMA1

Brand:Infineon
Model:IPD65R650CEATMA1
stock:56118
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
series CoolMOS™
Part status stop production
working temperature -40°C ~ 150°C(TJ)
Encapsulation/Housing PG-TO252-3
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 650 V
Current at 25 ° C - continuous drain (Id) 10.1A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 650 mΩ @ 2.1A,10V
Vgs (th) (maximum) for different Ids 3.5V @ 0.21mA
Gate charge (Qg) at different Vgs (maximum) 23 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 440 pF @ 100 V
FET function Grade knot
Power dissipation (maximum) 86W(Tc)
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