Installation type | Surface mount |
packing | TR |
series | Automotive, AEC-Q101, HEXFET® |
Part status | stop production |
working temperature | -55°C ~ 175°C(TJ) |
Encapsulation/Housing | PG-TO263-3 |
Country of origin | Germany |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 24 V |
Current at 25 ° C - continuous drain (Id) | 340A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
On resistance (maximum) for different Ids and Vgs | 1.65 mΩ @ 195A,10V |
Vgs (th) (maximum) for different Ids | 4V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 240 nC @ 10 V |
Vgs (max) | ±20V |
Input capacitance at different Vds (Ciss) (maximum) | 7590 pF @ 24 V |
FET function | - |
Power dissipation (maximum) | 300W(Tc) |