IRFH7182TRPBF
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IRFH7182TRPBF
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IRFH7182TRPBF

Brand:Infineon
Model:IRFH7182TRPBF
stock:41882
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
series FASTIRFET™, HEXFET®
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing 8-PQFN(5x6)
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 100 V
Current at 25 ° C - continuous drain (Id) 23A(Ta),157A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 3.9 mΩ @ 50A,10V
Vgs (th) (maximum) for different Ids 3.6V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 74 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 3120 pF @ 50 V
FET function -
Power dissipation (maximum) 4W(Ta),195W(Tc)
Common problem
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