IGT60R190D1SATMA1
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likeIGT60R190D1SATMA1
Brand：Infineon
Model：IGT60R190D1SATMA1
stock：6470
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
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Price：1+
￥9.12
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| Installation type | Surface mount |
| packing | TR,CT,bulk |
| series | CoolGaN™ |
| Part status | stop production |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | PG-HSOF-8-3 |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | GaNFET(Gallium nitride) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 600 V |
| Current at 25 ° C - continuous drain (Id) | 12.5A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | - |
| On resistance (maximum) for different Ids and Vgs | - |
| Vgs (th) (maximum) for different Ids | 1,6V @ 960µA |
| Gate charge (Qg) at different Vgs (maximum) | - |
| Vgs (max) | -10V |
| Input capacitance at different Vds (Ciss) (maximum) | 157 pF @ 400 V |
| FET function | - |
| Power dissipation (maximum) | 55,5W(Tc) |
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