IPD048N06L3GATMA1
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IPD048N06L3GATMA1
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IPD048N06L3GATMA1

Brand:Infineon
Model:IPD048N06L3GATMA1
stock:40685
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
series OptiMOS™
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing PG-TO252-3-311
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 90A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 4.8 mΩ @ 90A,10V
Vgs (th) (maximum) for different Ids 2.2V @ 58µA
Gate charge (Qg) at different Vgs (maximum) 50 nC @ 4.5 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 8400 pF @ 30 V
FET function -
Power dissipation (maximum) 115W(Tc)
Common problem
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