MT53E128M32D2DS-053 WT:A TR IC DRAM 4GBIT 1.866GHZ 200WFBGA
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likeMT53E128M32D2DS-053 WT:A TR IC DRAM 4GBIT 1.866GHZ 200WFBGA
Brand：Micron
Model：MT53E128M32D2DS-053 WT:A TR
stock：16385
Store：ShenZhen/Hongkong
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￥21.88
The market price fluctuates. Please consult the customer service for the actual price
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| Memory format | DRAM |
| Installation type | Surface mount |
| packing | TR |
| series | - |
| Part status | On sale |
| Memory type | Volatile |
| storage capacity | 4Gb(128M x 32) |
| Voltage - Supply | 1.1V |
| working temperature | -30°C ~ 85°C(TC) |
| Memory interface | - |
| Clock frequency | 1866 MHz |
| Access time | - |
| Access time | - |
| Encapsulation/Housing | 200-WFBGA |
| Country of origin | China/USA/Japan, etc |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | SDRAM - Mobile LPDDR4 |
| Random read | - |
| DWPD | - |
| Current - maximum | - |
| Flash architecture | - |
Common problem
Industry trends
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he vice chairman of the flash memory famous company Kioxia warned of "decoupling" from China: the cost is high!
SK Hynix: It has secured the supply of equipment to its Chinese plant without obtaining a license within one year
Toshiba MCU plant forced to stop work due to power outage! Or cause a significant reduction in production capacity
The market estimates that the price of Q4 memory DRAM will be reduced by about 15%, and the price of DDR5 will be closer to DDR4
SK Hynix successfully developed 238 layers of NAND flash memory
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