Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
50 V
15mA(DC)
900 mV @ 15 mA
950 mV @ 15 mA
1 ns
200 nA @ 30 V
200 nA @ 40 V
2.2pF @ 0V,1MHz
2.1pF @ 0V,1MHz