Total: 7
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
bulk
TR,TR,CT,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
No recovery time > 500mA(Io)
standard
SiC Schottky
1200 V
600 V
22.5A(DC)
1.75 V @ 8 A
1.6 V @ 22.5 A
-
0 ns
200 µA @ 1200 V
27 µA @ 600 V
538pF @ 1V,100kHz