Total: 5
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
SBR®
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
Schottky barrier
Level barrier
60 V
45 V
5A
600 mV @ 5 A
-
55 µA @ 60 V
9.5 µA @ 45 V
280 µA @ 45 V