Total: 6
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
30 V
10 V
45 V
500mA(DC)
2A(DC)
3A(DC)
750mA(DC)
600 mV @ 1 A
600 mV @ 200 mA
600 mV @ 2 A
500 mV @ 500 mA
-
200 µA @ 30 V
300 µA @ 30 V
10 µA @ 45 V
25 µA @ 8 V
70pF @ 1V,1MHz
10pF @ 10V,1MHz
15pF @ 5V,1MHz
30pF @ 5V,1MHz