Total: 31
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Through-Hole
TR,CT
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
Schottky barrier
20 V
100 V
40 V
50 V
30 V
150 V
60 V
1A
200mA(DC)
3A
100mA(DC)
5A
150mA(DC)
15mA(DC)
350mA(DC)
450 mV @ 1 A
600 mV @ 1 A
550 mV @ 1 A
500 mV @ 1 A
500 mV @ 3 A
1 V @ 200 mA
600 mV @ 200 mA
800 mV @ 1 A
740 mV @ 3 A
670 mV @ 5 A
750 mV @ 1 A
550 mV @ 5 A
790 mV @ 3 A
1 V @ 15 mA
500 mV @ 5 A
525 mV @ 3 A
620 mV @ 3 A
800 mV @ 5 A
550 mV @ 3 A
450 mV @ 10 mA
820 mV @ 1 A
820 mV @ 3 A
570 mV @ 1 A
750 mV @ 200 mA
450 mV @ 1 mA
-
5 ns
10 ns
5 µA @ 75 V
1 mA @ 20 V
1 mA @ 40 V
1 mA @ 30 V
200 µA @ 40 V
500 µA @ 40 V
100 nA @ 50 V
2 µA @ 150 V
600 µA @ 60 V
2 mA @ 30 V
500 µA @ 60 V
500 µA @ 100 V
500 µA @ 50 V
500 µA @ 30 V
600 µA @ 100 V
2 mA @ 40 V
500 nA @ 25 V
50 µA @ 60 V
200 nA @ 50 V
1 µA @ 150 V
5 µA @ 20 V
60 µA @ 60 V
25 µA @ 40 V
20pF @ 0V,1MHz
50pF @ 0V,1MHz
110pF @ 4V,1MHz
7pF @ 1V,1MHz
2pF @ 1V,1MHz
2.2pF @ 0V,1MHz
300pF @ 4V,1MHz
400pF @ 4V,1MHz
10pF @ 0V,1MHz