Total: 12
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Through-Hole
TR,CT,bulk
SWITCHMODE™
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
standard
Schottky barrier
100 V
40 V
600 V
1000 V
800 V
30 V
150 V
1A
1.1 V @ 1 A
600 mV @ 1 A
1.3 V @ 1 A
550 mV @ 1 A
1.25 V @ 1 A
875 mV @ 1 A
950 mV @ 1 A
790 mV @ 1 A
1.75 V @ 1 A
-
50 ns
75 ns
35 ns
150 ns
100 ns
1 mA @ 40 V
1 mA @ 30 V
5 µA @ 100 V
10 µA @ 1000 V
5 µA @ 600 V
10 µA @ 800 V
2 µA @ 100 V
500 µA @ 100 V
5 µA @ 150 V
15pF @ 4V,1MHz