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Diode rectifier

Total: 13

JANTX1N5812
Brand：Microchip
Stock：32171
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 50V 20A DO203AA
Offer
JANS1N5812R
Brand：Microchip
Stock：59038
Store: ShenZhen/Hongkong
Description：RECTIFIER DIODE
Offer
Price：1+
￥1075.18
JANS1N5812
Brand：Microchip
Stock：4940
Store: ShenZhen/Hongkong
Description：RECTIFIER DIODE
Offer
Price：1+
￥998.38
JANTXV1N5812R
Brand：Microchip
Stock：32723
Store: ShenZhen/Hongkong
Description：RECTIFIER
Offer
Price：1+
￥303.16
JANTXV1N5812
Brand：Microchip
Stock：24415
Store: ShenZhen/Hongkong
Description：RECTIFIER
Offer
Price：1+
￥220.79
JANTX1N5812R
Brand：Microchip
Stock：46789
Store: ShenZhen/Hongkong
Description：SCHOTTKY DIODE
Offer
Price：1+
￥183.93
JAN1N5812R
Brand：Microchip
Stock：54517
Store: ShenZhen/Hongkong
Description：RECTIFIER
Offer
Price：1+
￥163.58
JAN1N5812
Brand：Microchip
Stock：31337
Store: ShenZhen/Hongkong
Description：RECTIFIER
Offer
Price：1+
￥150.91
1N1186
Brand：Microchip
Stock：28270
Store: ShenZhen/Hongkong
Description：STANDARD RECTIFIER
Offer
Price：1+
￥83.39
1N5812R
Brand：Microchip
Stock：76306
Store: ShenZhen/Hongkong
Description：RECTIFIER DIODE
Offer
Price：1+
￥72.77
1N5812
Brand：Microchip
Stock：11646
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 50V 20A DO203AA
Offer
Price：1+
￥68.97
1N6079US
Brand：Microchip
Stock：26389
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 50V 2A G-MELF
Offer
Price：1+
￥40.97
1N6079
Brand：Microchip
Stock：25157
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 50V 2A AXIAL
Offer
Price：1+
￥38.55
Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

Through-Hole

Terminal installation

pedestal,Terminal installation

packing

bulk

series

MILITARY, MIL-PRF-19500/478

Part status

On sale

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Standard recovery>500ns,> 200mA(Io)

Diode type

standard

Standard type, reverse polarity

Voltage DC reverse (Vr) (maximum)

50 V

200 V

Current average rectification (Io)

2A

20A

35A

Voltage at different If - forward (Vf)

1.5 V @ 37.7 A

1.4 V @ 110 A

950 mV @ 20 A

Reverse recovery time (trr)

-

15 ns

35 ns

30 ns

Current - reverse leakage at different Vr

10 µA @ 50 V

Capacitance at different Vr and F

-

300pF @ 10V,1MHz

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