Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Through-Hole
pipe
CoolSiC™+
stop production
Rapid recovery=< 500ns,> 200mA(Io)
No recovery time > 500mA(Io)
standard
SiC Schottky
600 V
8A
12A(DC)
1.85 V @ 20 A
1.7 V @ 12 A
135 ns
0 ns
400 µA @ 600 V
-
450pF @ 1V,1MHz