Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Through-Hole
bulk
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
500mA
650 mV @ 500 mA
-
10 µA @ 40 V
60pF @ 0V,1MHz