Rapid recovery=< 500ns,> 200mA(Io)10 µA @ 400 V100 ns-Diode rectifier[Parameters, quotations, pictures, datasheet]-ICQQG

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Diode rectifier

Total: 3

CMH08(TE12L,Q,M)

Brand：Toshiba

Stock：25019

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 400V 2A M-FLAT

CMH05(TE12L,Q,M)

Brand：Toshiba

Stock：40687

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 400V 1A M-FLAT

CMH02A(TE12L,Q,M)

Brand：Toshiba

Stock：2918

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 400V 3A M-FLAT

Brand

Microchip

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

packing

series

Part status

stop production

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Diode type

standard

Voltage DC reverse (Vr) (maximum)

400 V

Current average rectification (Io)

Voltage at different If - forward (Vf)

1.3 V @ 1 A

1.3 V @ 2 A

1.8 V @ 3 A

Reverse recovery time (trr)

100 ns

Current - reverse leakage at different Vr

10 µA @ 400 V

Capacitance at different Vr and F

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