Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
500mA(DC)
500mA
700 mV @ 500 mA
640 mV @ 500 mA
8 ns
20 ns
55 µA @ 40 V
29pF @ 4V,1MHz
70pF @ 1V,1MHz