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Diode rectifier

Total: 9

JANTXV1N5802US
Brand：Microchip
Stock：61984
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 50V 1A D5A
Offer
JANTXV1N5802
Brand：Microchip
Stock：10668
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 50V 1A AXIAL
Offer
JANTXV1N5802URS
Brand：Microchip
Stock：55156
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 50V 1A APKG
Offer
Price：1+
￥33.22
JANTX1N5802URS
Brand：Microchip
Stock：73899
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 50V 1A APKG
Offer
Price：1+
￥27.11
JAN1N5802URS
Brand：Microchip
Stock：1274
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 50V 1A APKG
Offer
Price：1+
￥23.96
JANTX1N5802US
Brand：Microchip
Stock：14481
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 50V 1A D5A
Offer
Price：1+
￥21.31
JAN1N5802US
Brand：Microchip
Stock：64927
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 50V 2.5A D5A
Offer
Price：1+
￥13.35
JANTX1N5802
Brand：Microchip
Stock：78056
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 50V 1A AXIAL
Offer
Price：1+
￥11.96
JAN1N5802
Brand：Microchip
Stock：41563
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 50V 2.5A AXIAL
Offer
Price：1+
￥9.20
Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

Through-Hole

packing

bulk

series

Military, MIL-PRF-19500/477

Part status

On sale

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Diode type

standard

Voltage DC reverse (Vr) (maximum)

50 V

Current average rectification (Io)

1A

2.5A

Voltage at different If - forward (Vf)

875 mV @ 1 A

975 mV @ 2.5 A

Reverse recovery time (trr)

25 ns

Current - reverse leakage at different Vr

1 µA @ 50 V

Capacitance at different Vr and F

25pF @ 10V,1MHz

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