Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
30 V
2A(DC)
600 mV @ 2 A
-
200 µA @ 30 V
70pF @ 1V,1MHz