Total: 5
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
SBR®
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
Level barrier
30 V
1A
500mA(DC)
430 mV @ 500 mA
435 mV @ 500 mA
480 mV @ 1 A
-
15 ns
75 µA @ 30 V
80pF @ 4V,1MHz
30pF @ 1V,1MHz