Total: 25
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
CT
TR,CT,bulk
Automotive, AEC-Q101
SBR®
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
Schottky barrier
Level barrier
30 V
1A
200mA(DC)
200mA
1.5A
500mA
2A
100mA(DC)
100mA
800mA
700mA
300mA
3A(DC)
550 mV @ 1 A
500 mV @ 1 A
450 mV @ 700 mA
600 mV @ 200 mA
500 mV @ 200 mA
600 mV @ 100 mA
550 mV @ 200 mA
520 mV @ 3 A
450 mV @ 500 mA
460 mV @ 1.5 A
500 mV @ 100 mA
460 mV @ 1 A
490 mV @ 2 A
480 mV @ 200 mA
310 mV @ 10 mA
220 mV @ 10 mA
520 mV @ 1.5 A
-
5.6 ns
50 µA @ 30 V
55pF @ 4V,1MHz
7pF @ 5V,1MHz
0.9pF @ 10V,1MHz
90pF @ 10V,1MHz
170pF @ 0V,1MHz
9pF @ 5V,1MHz
120pF @ 0V,1MHz
15pF @ 0V,1MHz
9.02pF @ 2V,1MHz
9.3pF @ 0V,1MHz