Total: 4
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
standard
Schottky barrier
200 V
1A
875 mV @ 1 A
850 mV @ 1 A
-
25 ns
2 µA @ 200 V
27pF @ 4V,1MHz
23pF @ 5V,1MHz