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Diode rectifier

Total: 14

SURS8120T3G-IR02
Brand：ON
Stock：28939
Store: ShenZhen/Hongkong
Description：DIODE GP ULT FAST 200V 1A SMB
Offer
MURS120T3H
Brand：ON
Stock：54636
Store: ShenZhen/Hongkong
Description：DIODE GEN PURPOSE
Offer
MURA120T3H
Brand：ON
Stock：66042
Store: ShenZhen/Hongkong
Description：DIODE GEN PURPOSE
Offer
SURS8120T3G-IR01
Brand：ON
Stock：51452
Store: ShenZhen/Hongkong
Description：DIODE GP ULT FAST 200V 1A SMB
Offer
SURS8120T3G
Brand：ON
Stock：22192
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 200V 1A SMB
Offer
Price：1+
￥0.20
SURA8120T3G
Brand：ON
Stock：14732
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 200V 2A SMA
Offer
Price：1+
￥0.27
MUR120
Brand：ON
Stock：50227
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 200V 1A AXIAL
Offer
Price：1+
￥0.07
MUR120RL
Brand：ON
Stock：66551
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 200V 1A AXIAL
Offer
NRVUA120VT3G
Brand：ON
Stock：15684
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 200V 2A SMA
Offer
Price：1+
￥10.00
NRVUS120VT3G
Brand：ON
Stock：75438
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 200V 2A SMB
Offer
Price：1+
￥3.18
MUR120G
Brand：ON
Stock：50234
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 200V 1A AXIAL
Offer
Price：1+
￥0.15
MURA120T3G
Brand：ON
Stock：46119
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 200V 2A SMA
Offer
Price：1+
￥0.24
MURS120T3G
Brand：ON
Stock：28151
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 200V 2A SMB
Offer
Price：1+
￥0.31
MUR120RLG
Brand：ON
Stock：17658
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 200V 1A AXIAL
Offer
Price：1+
￥0.18
Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

Through-Hole

packing

pallet

TR

TR,CT

TR,CT,bulk

bulk,bulk

series

Automotive, AEC-Q101

SWITCHMODE™

Part status

On sale

stop production

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Diode type

standard

Voltage DC reverse (Vr) (maximum)

200 V

Current average rectification (Io)

1A

1A(DC)

2A

Voltage at different If - forward (Vf)

875 mV @ 1 A

Reverse recovery time (trr)

35 ns

Current - reverse leakage at different Vr

2 µA @ 200 V

Capacitance at different Vr and F

-

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