stop productionRapid recovery=< 500ns,> 200mA(Io)5 µA @ 800 V-Diode rectifier[Parameters, quotations, pictures, datasheet]-ICQQG

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Diode rectifier

Total: 13

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 800V 2A DO15

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 800V 1A DO41

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 800V 1.5A DO41

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 800V 3A DO201AD

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 800V 2A DO15

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 800V 1.5A DO15

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 800V 1A DO41

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 800V 3A DO201AD

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 800V 2A DO15

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 800V 1A SMB

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 800V 1A DO41

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 800V 1A SMB

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 800V 2A DO15

Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

Through-Hole

packing

bulk

TR

TR,CT

series

Part status

stop production

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Diode type

standard

Voltage DC reverse (Vr) (maximum)

800 V

Current average rectification (Io)

1A

1.5A

2A

3A

Voltage at different If - forward (Vf)

1.3 V @ 1 A

1.7 V @ 3 A

1.3 V @ 2 A

1.7 V @ 2 A

1.7 V @ 1.5 A

1.3 V @ 1.5 A

1.3 V @ 3 A

1.65 V @ 1 A

1.65 V @ 2 A

Reverse recovery time (trr)

500 ns

75 ns

250 ns

Current - reverse leakage at different Vr

5 µA @ 800 V

Capacitance at different Vr and F

-

50pF @ 4V,1MHz

30pF @ 4V,1MHz

45pF @ 4V,1MHz

20pF @ 4V,1MHz

25pF @ 4V,1MHz

8pF @ 4V,1MHz

35pF @ 4V,1MHz

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