Total: 11
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
bulk
TR
TR,CT
TR,CT,bulk
bulk,bulk
SWITCHMODE™
stop production
Rapid recovery=< 500ns,> 200mA(Io)
standard
Schottky barrier
100 V
1A
8A
2A
875 mV @ 1 A
940 mV @ 2 A
900 mV @ 8 A
-
35 ns
30 ns
2 µA @ 100 V