Total: 7
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR
TR,CT
TR,CT,bulk
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
60 V
8A
2A
3A
5A
780 mV @ 5 A
800 mV @ 8 A
620 mV @ 3 A
760 mV @ 2 A
-
150 µA @ 60 V
8pF @ 4V,1MHz