Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Through-Hole
TR,CT
TR,bulk
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
50 V
3A
740 mV @ 3 A
-
600 µA @ 50 V