Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Through-Hole
TR,CT,bulk
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
30 V
3A
500 mV @ 3 A
-
500 µA @ 30 V
180pF @ 4V,1MHz