Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
SWITCHMODE™
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
50 V
3A
600 mV @ 3 A
-
200 µA @ 50 V