Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
bulk
TR,CT
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
30 V
3A
520 mV @ 3 A
20 ns
42 µA @ 15 V
90pF @ 10V,1MHz