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Diode rectifier

Total: 11

IDB12E120ATMA1
Brand：Infineon
Stock：15709
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 1.2KV 28A TO263-3
Offer
Price：1+
￥0.34
IDB18E120ATMA1
Brand：Infineon
Stock：4428
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 1.2KV 31A TO263-3
Offer
Price：1+
￥1.01
IDB30E120ATMA1
Brand：Infineon
Stock：58227
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 1.2KV 50A TO263-3
Offer
Price：1+
￥2.81
STTA512B
Brand：ST
Stock：62234
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 1.2KV 5A DPAK
Offer
APT75DQ120SG
Brand：Microchip
Stock：9066
Store: ShenZhen/Hongkong
Description：FRED DQ 1200 V 75 A TO-268
Offer
Price：1+
￥5.21
APT60DQ120SG
Brand：Microchip
Stock：39826
Store: ShenZhen/Hongkong
Description：FRED DQ 1200 V 60 A TO-268
Offer
Price：1+
￥4.72
APT40DQ120SG
Brand：Microchip
Stock：47095
Store: ShenZhen/Hongkong
Description：FRED DQ 1200 V 40 A TO-268
Offer
Price：1+
￥4.28
ISL9R8120S3ST
Brand：ON
Stock：53316
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 1.2KV 8A TO263
Offer
RURD4120S9A
Brand：ON
Stock：35628
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 1.2KV 4A DPAK
Offer
RURD4120S9A-F085
Brand：ON
Stock：44681
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 1.2KV 4A TO252
Offer
Price：1+
￥26.07
ISL9R18120S3ST
Brand：ON
Stock：30901
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 1200V 18A TO263AB
Offer
Price：1+
￥14.50
Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

packing

TR

TR,CT

pipe

TR,bulk

series

Automotive, AEC-Q101

Stealth™

TURBOSWITCH™

Part status

On sale

stop production

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Diode type

standard

Voltage DC reverse (Vr) (maximum)

1200 V

-

Current average rectification (Io)

8A

4A

5A

75A

50A(DC)

60A

18A

40A

28A(DC)

31A(DC)

Voltage at different If - forward (Vf)

3.3 V @ 18 A

2.1 V @ 4 A

3.3 V @ 8 A

3.4 V @ 40 A

3.3 V @ 60 A

3.3 V @ 75 A

2.2 V @ 5 A

2.15 V @ 30 A

2.15 V @ 12 A

2.15 V @ 18 A

Reverse recovery time (trr)

300 ns

350 ns

150 ns

90 ns

95 ns

325 ns

320 ns

243 ns

195 ns

Current - reverse leakage at different Vr

100 µA @ 1200 V

Capacitance at different Vr and F

-

30pF @ 10V,1MHz

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