Total: 18
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
TR,CT,bulk
TR,TR,CT,CT
POWERMITE®
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
Schottky barrier
40 V
30 V
10 V
45 V
1A
200mA(DC)
200mA
30mA(DC)
100mA(DC)
370 mV @ 1 mA
600 mV @ 200 mA
595 mV @ 2 A
530 mV @ 1 A
450 mV @ 10 mA
600 mV @ 50 mA
-
1 µA @ 10 V
6pF @ 10V,1MHz
2pF @ 1V,1MHz