Total: 9
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
bulk
TR
TR,CT
TR,CT,bulk
TR,bulk
POWERMITE®
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
20 V
1A
350mA(DC)
595 mV @ 2 A
530 mV @ 1 A
1 V @ 300 mA
-
10 µA @ 20 V
20pF @ 0V,1MHz