Total: 12
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
TR,CT,bulk
Automotive, AEC-Q101
SBR®
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
Schottky barrier
Level barrier
30 V
1A
200mA(DC)
200mA
2A
3A
2A(DC)
500 mV @ 3 A
500 mV @ 200 mA
500 mV @ 2 A
510 mV @ 1 A
480 mV @ 2 A
575 mV @ 200 mA
-
3 ns
150 µA @ 30 V
20pF @ 0V,1MHz
140pF @ 4V,1MHz
110pF @ 4V,1MHz