Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
100 V
1A
790 mV @ 1 A
-
200 µA @ 100 V
27pF @ 4V,1MHz