Total: 3
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT,bulk
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
200 V
3A
840 mV @ 3 A
-
35 ns
1 mA @ 200 V