Total: 15
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR
TR,CT
CT,TB
Q Automotive
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
Schottky barrier
Level barrier
60 V
10A
5A
520 mV @ 10 A
520 mV @ 5 A
600 mV @ 8 A
-
220 µA @ 60 V
550pF @ 4V,1MHz