Total: 6
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
Automotive, AEC-Q101
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
Schottky barrier
Level barrier
80 V
1A
500mA(DC)
20A
790 mV @ 1 A
850 mV @ 1 A
660 mV @ 20 A
420 mV @ 100 mA
-
200 µA @ 80 V
27pF @ 4V,1MHz
120pF @ 0V,1MHz