Total: 5
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT,bulk
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
90 V
1A
3A
790 mV @ 1 A
790 mV @ 3 A
850 mV @ 1 A
-
200 µA @ 90 V
27pF @ 4V,1MHz
105pF @ 4V,1MHz