10 µA @ 150 V-Diode rectifier[Parameters, quotations, pictures, datasheet]-ICQQG

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Diode rectifier

Total: 10

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 150V 1A DO41

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 150V 1A DO41

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 150V 2A DO15

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 150V 1A DO41

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 150V 3A SMB

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 150V 3A SMC

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 150V 3A SMC

Price：1+

￥0.60

Store: ShenZhen/Hongkong

Description：DIODE SCHOTTKY 150V 4A POWERDI5

Price：1+

￥2.12

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 150V 3A SMB

Price：1+

￥0.91

Store: ShenZhen/Hongkong

Description：DIODE SCHOTTKY 150V 4A POWERDI5

Price：1+

￥1.76

Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

Through-Hole

packing

bulk

TR

TR,CT

TB

series

Automotive, AEC-Q101

Part status

On sale

stop production

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Diode type

standard

Schottky barrier

Voltage DC reverse (Vr) (maximum)

150 V

Current average rectification (Io)

1A

4A

2A

3A

Voltage at different If - forward (Vf)

950 mV @ 2 A

950 mV @ 1 A

900 mV @ 3 A

760 mV @ 4 A

810 mV @ 8 A

Reverse recovery time (trr)

-

25 ns

35 ns

Current - reverse leakage at different Vr

10 µA @ 150 V

Capacitance at different Vr and F

-

45pF @ 4V,1MHz

75pF @ 4V,1MHz

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